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晶体管
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Single Bipolar Junction Transistors
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Multicomp Pro BC109C 晶体管,Npn,TO-18
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Multicomp Pro BC109C 晶体管,Npn,TO-18
品牌:
MULTICOMP PRO
模型:
BC109C
技术数据表
Technical Data Sheet (264.38KB) EN
Specifications
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Single Bipolar Junction Transistors
dimensions or variations
Please select at least one specification below.
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Termination Type
Through Hole
Operating Temperature Min
-65°C
Operating Temperature Max
200°C
Transistor Case Style
TO-18
Collector Emitter Voltage Max
25 V
Power Dissipation
600 mW
DC Current Gain hFE
800 hFE
Transition Frequency
150 MHz
DC Collector Current
200mA
Collector Emitter Saturation Voltage Vce(on)
250 mV
Current Ic hFE
2 mA
Voltage Vcbo
30 V
Gain Bandwidth ft Min
150 MHz
Gain Bandwidth ft Typ
150 MHz
RohsCompliant
YES
This spec is not available in the specification table.
Transistor Polarity
NPN
This spec is not available in the specification table.
No. of Pins
3Pins
This spec is not available in the specification table.
Collector Emitter Voltage V(br)ceo
25 V
This spec is not available in the specification table.
产品描述
¥ 4.34
数量:
EA
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This item is sold by
SG-7425082168
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Shop by Specification Table
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Single Bipolar Junction Transistors
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Transistor Case Style
SOT-23, SOT-89, TO-205AD, TO-3, TO-247
Collector Emitter Voltage Max
140 V, 250 V, 450 V, 65 V, 400 V
Power Dissipation
5 W, 50 W, 150 W, 1.4 W, 3 W
DC Current Gain hFE
240 hFE, 50 hFE, 8 hFE, 450 hFE, 25 hFE
Transition Frequency
30 MHz, 400 MHz, 400kHz, 250 MHz, 70 MHz
DC Collector Current
-600mA, 6A, 200mA, 8A, 40A
Collector Emitter Saturation Voltage Vce(on)
250 mV, -250 mV, -1 V, 400 mV, 3 V
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