Multicomp Pro 2N5416 射频晶体管，Pnp，TO-39

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晶体管

Single Bipolar Junction Transistors

Multicomp Pro 2N5416 射频晶体管，Pnp，TO-39

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Multicomp Pro 2N5416 射频晶体管，Pnp，TO-39

品牌:	MULTICOMP PRO
模型:	2N5416

技术数据表

Technical Data Sheet (233.89KB) EN

Specifications

View other Single Bipolar Junction Transistors dimensions or variations

Termination Type

Through Hole

Operating Temperature Max

200°C

Transistor Case Style

TO-39

Power Dissipation

1 W

DC Current Gain hFE

30 hFE

Transition Frequency

15 MHz

DC Collector Current

-1A

Current Ic hFE

50 mA

Voltage Vcbo

350 V

Gain Bandwidth ft Min

15 MHz

Gain Bandwidth ft Typ

15 MHz

RohsCompliant

YES

Transistor Polarity

PNP

No. of Pins

3Pins

Collector Emitter Voltage V(br)ceo

-300 V

产品描述

¥ 11.25

数量:

/ EA

This item is sold by

SG-7425082168

Shop by Specification Table

You can find items with similar specifications from the table below.

Single Bipolar Junction Transistors

138 Items

Termination Type

Surface Mount Device, Through Hole

Operating Temperature Min

-55°C, -65°C

Operating Temperature Max

150°C, 175°C, 200°C

Transistor Case Style

SOT-23, SOT-89, TO-, TO-126

Collector Emitter Voltage Max

100 V, 12 V, 140 V, 175 V

Power Dissipation

100 W, 10 W, 113 W, 12.5 W, 125 W

DC Current Gain hFE

100 hFE, 10 hFE, 110 hFE, 120 hFE