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Specification Tables

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Single Bipolar Junction Transistors

single-bipolar-junction-transistors-img

Transistor Case Style

TO-220, TO-205AD, TO-3, TO-39, TO-18

Collector Emitter Voltage Max

200 V, 25 V, 140 V, 250 V, 450 V

Power Dissipation

113 W, 10 W, 50 W, 5 W, 1.4 W

DC Current Gain hFE

110 hFE, 8 hFE, 250 hFE, 450 hFE, 25 hFE

Transition Frequency

30 MHz, 400 MHz, 400kHz, 10 MHz, 70 MHz

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Rs Pro Inductive Block-Style Proximity Sensor, 40 Mm Detection, Pnp Output, 10 ? 30 V Dc, IP68

Rs Pro Inductive Block-Style Proximity Sensor, 75 Mm Detection, Pnp Output, 10 ? 30 V Dc, IP67

Rs Pro Capacitive Barrel-Style Proximity Sensor, M12 X 1, 4 Mm Detection, Pnp Output, 10 ? 30 V Dc, IP67

Rs Pro Inductive Block-Style Proximity Sensor, 25 Mm Detection, Pnp Output, 10 ? 30 V Dc, IP68

Rs Pro Inductive Block-Style Proximity Sensor, 35 Mm Detection, Pnp Output, 10 ? 30 V Dc, IP68

Rs Pro Inductive Barrel-Style Proximity Sensor, M18 X 1, 5 Mm Detection, Pnp Output, 10 ? 30 V Dc, IP67

Rs Pro Inductive Barrel-Style Proximity Sensor, M12 X 1, 8 Mm Detection, Pnp Output, 10 ? 30 V Dc, IP68

Rs Pro Inductive Barrel-Style Proximity Sensor, M12 X 1, 8 Mm Detection, Pnp Output, 10 ? 30 V Dc, IP68

Rs Pro Inductive Barrel-Style Proximity Sensor, M8 X 1, 4 Mm Detection, Pnp Output, 10 ? 30 V Dc, IP68

Rs Pro Inductive Barrel-Style Proximity Sensor, M8 X 1, 1.5 Mm Detection, Pnp Output, 10 ? 30 V Dc, IP68