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Multicomp Pro BD139-10 Transistor, Npn, TO-126
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Multicomp Pro BD139-10 Transistor, Npn, TO-126
Brand:
MULTICOMP PRO
Model:
BD139-10
Technical Data Sheets
Technical Data Sheet (307.16KB) EN
Specifications
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Single Bipolar Junction Transistors
dimensions or variations
Please select at least one specification below.
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Termination Type
Through Hole
Operating Temperature Min
-55°C
Operating Temperature Max
150°C
Transistor Case Style
TO-126
Power Dissipation
12.5 W
DC Current Gain hFE
63 hFE
DC Collector Current
1.5A
Collector Emitter Saturation Voltage Vce(on)
500 mV
Current Ic hFE
150 mA
Voltage Vcbo
100 V
RohsCompliant
YES
This spec is not available in the specification table.
Transistor Polarity
NPN
This spec is not available in the specification table.
No. of Pins
3Pins
This spec is not available in the specification table.
Collector Emitter Voltage V(br)ceo
80 V
This spec is not available in the specification table.
Product Description
RM 5.62
Lead time of 5 working days required.
Item will be ready to dispatch within the lead time specified.
Quantity:
EA
MOQ of 5 EA
Bundle of 5 EA
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This item is sold by
SG-7425082168
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Shop by Specification Table
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Single Bipolar Junction Transistors
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Transistor Case Style
SOT-23, SOT-89, TO-205AD, TO-3, TO-247
Collector Emitter Voltage Max
140 V, 250 V, 450 V, 65 V, 400 V
Power Dissipation
5 W, 50 W, 150 W, 1.4 W, 3 W
DC Current Gain hFE
240 hFE, 50 hFE, 8 hFE, 450 hFE, 25 hFE
Transition Frequency
30 MHz, 400 MHz, 400kHz, 250 MHz, 70 MHz
DC Collector Current
-600mA, 6A, 200mA, 8A, 40A
Collector Emitter Saturation Voltage Vce(on)
250 mV, -250 mV, -1 V, 400 mV, 3 V
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